Ellipsometry is a very sensitive optical technique which provides unequaled capabilities for thin film metrology. Ellipsometry exploits phase information and polarization state of light and so can achieve angstrom level resolution. The main advantages of ellipsometry are its non-destructive character, high sensitivity and wide measurement range. The optical parameters like thickness and refractive indices of a thin film can be determined precisely by this technique.
在椭圆计模型没有:HO-ED-P-06,线性构造arly polarized light is made incident on the test substrate and the reflected light which is linearly polarized is analyzed for polarization changes.
Sample is placed on a precision micrometer driven vertical stage with height adjustment range of 10 mm and resolution 0.01 mm. Incident angle for laser source can be adjusted between 30° and 90°. For null method, detector can be replaced with a miniature screen for visual determination of null point, if required.
As shown in the Fig., randomly polarized laser light (532nm) passes through a polarizer which changes the polarization of light from random polarization to linear polarization. The linearly polarized light then passes through a quarter-wave plate (set the fast axis at 45 degree) which changes the polarization state from linear to circular. After reflection from the sample thin film, the circularly polarized light becomes linearly polarized and an analyzer measures the degree of polarization.
Measurement Range : 1 nm ~ 300 nm
入射角:30°~ 90°,误差≤0.1°
Rotation Range
Polarizer : 0° ~ 360°
Quarter-Wave : 0° ~ 360°
Resolution : 0.1 degree
Laser : DPSS (532nm, 5mW)
Laser Arm
Rotation Range : 70 degree (from horizontal plane)
Main Scale Division : 1 degree
Resolution : 0.1 degree
Detector
Type : Si Photodiode
Active area : 5.8 x 5.8 mm
Detector Arm
Rotation Range : 70 degree (from horizontal plane)
Main Scale Division : 1 degree
Resolution : 0.1 degree
Sample Holder
Height Adjustment Range : 10 mm
Drive Resolution : 10 microns
Tilting Range : +/- 2 degree
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